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1 memory all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301- www.maxwell.com 3.3v 1 megabit (128k x 8-bit) 28lv010 ?2001 maxwell technologies all rights reserved. eeprom 12.19.01 rev 3 1000579 f eatures : ? 3.3v low voltage operation 128k x 8 bit eeprom ?r ad -p ak ? radiation-hardened agai nst natural space radiation ? total dose hardness: - > 100 krad (si), depending upon space mission ? excellent single event effects: - sel th > 84 mev/mg/cm 2 - seu th > 37 mev/mg/cm 2 (read mode) -seu saturated cross section = 3e-6 cm 2 (read mode) - seu th = 11.4 mev/mg/cm 2 (write mode) -seu saturated cross section = 5e-3 cm 2 (write mode) with hard errors ? package: - 32 pin r ad -p ak ? flat pack - 32 pin r ad -p ak ? dip - jedec-approved byte-wide pinout ? address access time: - 200, 250 ns maximum access times available ? high endurance: - 10,000 erase/write (in page mode), 10-year data retention ? page write mode: - 1 to 128 bytes ? automatic programming - 10 ms automatic page/byte write ? low power dissipation - 20 mw/mhz active current (typ.) - 72 w standby (maximum) d escription : maxwell technologies? 28lv010 high density, 3.3v, 1 megabit eeprom microcircuit features a greater than 100 krad (si) total dose tolerance, depending upon space mission. the 28lv010 is capable of in-system electrical byte and page pro- grammability. it has a 128-byte page programming function to make its erase and write operati ons faster. it also features data polling and a ready/busy signal to indicate the comple- tion of erase and programming operations. in the 28lv010, hardware data protection is provided with the res pin, in addi- tion to noise protection on the we signal and write inhibit on power on and off. meanwhile, software data protection is implemented using the jedec- optional standard algorithm. the 28lv010 is designed for high reliability in the most demanding space applications. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shie lding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding fo r a lifetime in orbit or space mission. in a geo orbit, r ad -p ak provides greater than 100 krad (si) radiation dose toleranc e. this product is available with screening up to class s. note:the recommended form of data protection during power on/off is to hold the res pin to v ss during power up and power down. this may be accompanied by connecting the res pin to the cpu reset line. failure to provide adequate protection during power on/off may result in lost or modified data. high voltage generator control logic timing address buffer and latch y decoder x decoder y gating memory array i/o buffer and input latch data latch v cc v ss res oe ce we res a0 a6 a7 a16 i/o0 i/o7 rdy/busy logic diagram
memory 2 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 t able 1. 28lv010 p inout d escription p in s ymbol d escription 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 a0-a16 address 13-15, 17-21 i/o0 - i/o7 input/output 24 oe output enable 22 ce chip enable 29 we write enable 32 v cc power supply 16 v ss ground 1 rdy/busy ready/busy 30 res reset t able 2. 28lv010 a bsolute m aximum r atings p arameter s ymbol m in m ax u nit supply voltage (relative to vss) v cc -0.6 7.0 v input voltage (relative to vss) v in -0.5 1 1. v in min = -3.0 v for pulse width < 50 ns. 7.0 v operating temperature range t opr -55 125 c storage temperature range t stg -65 150 c t able 3. d elta l imits p arameter v ariation i cc 1 10% i cc 2 10% i cc 3a 10% i cc 3b 10%
memory 3 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 t able 4. 28lv010 r ecommended o perating c onditions p arameter symbol min max unit supply voltage v cc 3.0 3.6 v input voltage res _pin v il v ih v h -0.3 1 2.0 2 v cc -0.5 1. v il min = -1.0 v for pulse width < 50 ns. 2. v ih min = 2.2 v for v cc = 3.6 v. 0.8 v cc +0.3 v cc +1 v operating temperature range t opr -55 +125 c t able 5. 28lv010 c apacitance (t a = 25c, f = 1mh z ) p arameter s ymbol m in m ax u nit input capacitance: v in = 0v 1 1. guaranteed by design. c in -- 6 pf output capacitance: v out = 0v 1 c out -- 12 pf t able 6. 28lv010 dc e lectrical c haracteristics (v cc = 3.3v 0.3, t a = -55 to +125c unless otherwise specified ) p arameter t est c onditions s ymbol m in m ax u nit input leakage current v cc = 3.6v, v in = 3.6v i li -- 2 a output leakage current v cc = 3.6v, v out = 3.6v/0.4v i lo -- 2 a standby v cc current ce = v cc ce = v ih i cc1 i cc2 -- -- 20 1 a ma operating v cc current i out = 0ma, duty = 100%, cycle = 1 s @ v cc = 3.3v i out = 0ma, duty = 100%, cycle = 250 ns @ v cc = 3.3v i cc3 -- -- 6 15 ma input voltage v il v ih v h -- 2.0 1 v cc -0.5 1. v ih min = 2.2v for v cc = 3.6v. 0.8 -- -- v output voltage i ol = 2.1 ma i oh = -400 a v ol v oh -- v cc x0.8 0.4 -- v
memory 4 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 t able 7. 28lv010 ac c haracteristics for r ead o peration 1 (v cc = 3.3v 10%, t a = -55 to +125 c unless otherwise specified ) 1. test conditions: input pulse levels - 0.4v to 2.4v; input rise and fall times < 20 ns; output load - 1 ttl gate + 100 pf (including scope and jig); reference leve ls for measuring timing - 0.8v/1.8v. p arameter t est c onditions s ymbol m in m ax u nit address access time -200 -250 ce = oe = v il , we = v ih t acc -- -- 200 250 ns chip enable access time -200 -250 oe = v il , we = v ih t ce -- -- 200 250 ns output enable access time -200 -250 ce = v il , we = v ih t oe 0 0 110 120 ns output hold to address change -200 -250 ce = oe = v il , we = v ih t oh 0 0 -- -- ns output disable to high-z 2 -200 -250 2. t df and t dfr is defined as the time at which the output be comes an open circuit and data is no longer driven. ce = v il , we = v ih ce = oe = v il , we = v ih t df 0 0 50 50 ns output disable to high-z -200 -250 ce = v il , we = v ih ce = oe = v il , we = v ih t dfr 0 0 300 350 ns res to output delay 3 -200 -250 3. guaranteed by design. ce = oe = v il we = v ih t rr 0 0 525 550 ns
memory 5 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 t able 8. 28lv010 ac e lectrical c haracteristics for e rase and w rite o perations (v cc = 3.3v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nit address setup time -200 -250 t as 0 0 -- -- ns chip enable to write setup time (we controlled) -200 -250 t cs 0 0 -- -- ns write pulse width (ce controlled) -200 -250 t cw 200 250 -- -- ns write pulse width (we controlled) -200 -250 t wp 200 250 -- -- ns address hold time -200 -250 t ah 125 150 -- -- ns data setup time -200 -250 t ds 100 100 -- -- ns data hold time -200 -250 t dh 10 10 -- -- ns chip enable hold time (we controlled) -200 -250 t ch 0 0 -- -- ns write enable to write setup time (ce controlled) -200 -250 t ws 0 0 -- -- ns write enable hold time (ce controlled) -200 -250 t wh 0 0 -- -- ns output enable to write setup tim -200 -250 t oes 0 0 -- -- ns output enable hold time -200 -250 t oeh 0 0 -- -- ns write cycle time 1,2 -200 -250 t wc -- -- 15 15 ms
memory 6 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 byte load cycle -200 -250 t blc 1 1 30 30 s data latch time 2 -200 -250 t dl -- -- 700 750 ns byte load window 2 -200 -250 t bl 100 100 -- -- s time to device busy -200 -250 t db 100 120 -- -- ns write start time -200 -250 t dw 150 150 -- -- ns res to write setup time 2 -200 -250 t rp 100 100 -- -- s v cc to res setup time 2 -200 -250 t res 1 1 -- -- s 1. t wc must be longer than this value unl ess polling techniques or rdy/bsy are used. this device automatically completes the internal write operation within this value. 2. guaranteed by design. t able 9. 28lv010 m ode s election 1,2 m ode ce oe we res rdy/busy i/o read v il v il v ih v h high-z d out standby v ih x x x high-z high-z write v il v ih v il v h high-z --> v ol d in deselect v il v ih v ih v h high-z high-z write inhibit x x v ih x-- -- xv il x x -- -- data polling v il v il v ih v h v ol data out (i/o7) program x x x v il high-z high-z 1. x = don?t care. 2. refer to the recommended dc operating conditions. t able 8. 28lv010 ac e lectrical c haracteristics for e rase and w rite o perations (v cc = 3.3v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter s ymbol m in m ax u nit
memory 7 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 1. r ead t iming w aveform
memory 8 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 2. b yte w rite t iming w aveform (1) (we c ontrolled )
memory 9 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 3. b yte w rite t iming w aveform (2) (ce c ontrolled )
memory 10 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 4. p age w rite t iming w aveform (1) (we c ontrolled )
memory 11 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) f igure 6. s oftware d ata p rotection t iming w aveform (1) ( in protection mode )
memory 12 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 7. s oftware d ata p rotection t iming w aveform (2) ( in non - protection mode ) f igure 8. d ata p olling t iming w aveform
memory 13 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 9. t oggle b it w aveform f igure 10. seu s aturated c ross s ection v alues in r ead m ode 28lv010 read mode cross-section 1.00e-07 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 0 102030405060708090 let [mev-cm^2/mg] cross-section [cm^2] lv1 lv2 lv5 lv6
memory 14 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f igure 11. seu s aturated c ross s ection v alues in w rite m ode eeprom a pplication n otes this application note describ es the programming procedures for the eepr om modules and with details of various techniques to preserve data protection. automatic page write page-mode write feature allows 1 to 128 bytes of data to be writte n into the eeprom in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (a0 to a6). loading the first byte of data, the data load window opens 30 s for the second byte. in the same manner each additional byte of data can be loaded within 30 s. in case ce and we are kept high for 100(s after data input, eeprom enters erase and write mode automatically and only the input data are written into the eeprom. we ce pin operation during a write cycle, ad dresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce . data polling data polling function allows the status of the eeprom to be determined. if eepr om is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from i/o 7 to indicate that the eeprom is per- forming a write operation. 28lv010 write mode average cros s -s ection 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 0 102030405060708090 let [mev-cm^2/mg] cross-section [cm^2] sl1 sl2 sl3 n4 n5
memory 15 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 rdy/busy signal rdy/busy signal also allows a comparison operation to determine the status of the eeprom. the rdy/busy signal has high impedance except in write cycle and is lowered to v ol after the first write signal. at the-end of a write cycle, the rdy/busy signal changes state to high impedance. res signal when res is low, the eeprom cannot be read and programmed. therefore, data can be protected by keeping res low when v cc is switched. res should be high during read and programming because it doesn?t provide a latch function. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation. during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mis- take. to prevent this phenomenon, the eeprom has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. be careful not to allow noise of a width of more than 20 ns on the control pins. 2. data protection at v cc on/off
memory 16 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 when v cc is turned on or off, noise on the control pins generated by ex ternal circuits, such as cpus, may turn the eeprom to programming mode by mistake. to prevent this unintentional programming, the eeprom must be kept in unprogrammable state during v cc on/off by using a cpu reset signal to res pin. res should be kept at v ss level when v cc is turned on or off. the eeprom br eaks off programming operation when res become low, programming operat ion doesn?t finish correctly in case that res falls low during programming operation. res should be kept high for 10 ms after the last data input. 3. software data protection the software data protection function is to prevent unintentional progr amming caused by noise generat ed by external circuits. in software data protection mode, 3 bytes of data must be input before write data as follows. these bytes can switch the non- protection mode to the protection mode. software data protection mode can be canceled by inputting the fo llowing 6 bytes. then, the eeprom turns to the non-protec- tion mode and can write data normally. however, when the data is input in the canceling cycle, the data cannot be written.
memory 17 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 f32-10 note: all dimensions in inches 32-p in r ad -p ak ? f lat p ackage s ymbol d imension m in n om m ax a 0.121 0.134 0.147 b 0.015 0.017 0.022 c 0.004 0.005 0.009 d -- 0.820 0.830 e 0.472 0.480 0.488 e1 -- -- 0.498 e2 0.304 0.310 -- e3 0.030 0.085 -- e 0.050bsc l 0.355 0.365 0.375 q 0.020 0.035 0.045 s1 0.005 0.027 -- n32
memory 18 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 d32-02 note: all dimensions in inches 32 p in d ual i n -l ine p ackage s ymbol d imension m in n om m ax a -- 0.152 0.225 b 0.014 0.018 0.026 b2 0.045 0.050 0.065 c 0.008 0.010 0.018 d -- 1.600 1.680 e 0.510 0.590 0.620 ea 0.600 bsc ea/2 0.300 bsc e 0.100 bsc l 0.135 0.145 0.155 q 0.015 0.037 0.070 s1 0.005 0.025 -- s2 0.005 -- -- n32
memory 19 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 important notice: these data sheets are created using the chip manufacturer s published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample test ing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the us e of this information. maxwell technologies? products are not authorized for use as critical components in li fe support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.
memory 20 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 3.3v 1 megabit (128k x 8-bit) eeprom 28lv010 12.19.01 rev 3 1000579 product ordering options model number feature option details 2 8lv010 xx x x -xx access time screening flow package radiation feature base product nomenclature 20 = 200 ns 25 = 250 ns monolithic s = maxwell class s b = maxwell class b e = engineering (testing @ +25c ) i = industrial (testing @ -55c, +25c, +125c) d = dual in-line package (dip) f = flat pack rp = r ad -p ak ? package rt1 = guaranteed to 10 krad at die level rt2 = guaranteed to 25 krad at die level rt4 = guaranteed to 40 krad at die level 3.3v 1 megabit (128k x 8-bit) eeprom

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